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1996
Journal Article
Titel
Design and realisation of waveguide integrated AlInAs/GaInAs HEMTs regrown by MBE for high bit rate optoelectronic receivers on InP
Abstract
The successful fabrication of AlInAs/GaInAs HEMTs, regrown by MBE on patterned optical waveguide surfaces after the local removal of a previously grown photodiode layer stack, is reported. The devices are part of a distributed amplifier within an integrated optoelectronic receiver intended to operate at a 1.55 mu m wavelength and at bit rates of 20 and/or 40 Gbit/s. The performance of the HEMTs is highly comparable to reference devices grown on planar surfaces.
Tags
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aluminium compounds
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distributed amplifiers
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gallium arsenide
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high electron mobility transistors
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iii-v semiconductors
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indium compounds
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integrated optoelectronics
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molecular beam epitaxial growth
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optical receivers
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semiconductor epitaxial layers
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semiconductor growth
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waveguide integrated hemts
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mbe
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bit rates
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patterned optical waveguide surfaces
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distributed amplifier
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integrated optoelectronic receiver
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reference devices
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1.55 micrometre
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20 Gbit/s
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40 Gbit/s
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AlInAs-GaInAs
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inp