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2010
Conference Paper
Titel
Reliability status of GaN transistors and MMICs in Europe
Alternative
Status der Zuverlässigkeit von GaN Transistoren und MMICs in Europa
Abstract
Recent DC- and RF-reliability results of European GaN HEMTs for high frequency power and MMIC applications between 2 and 18 GHz will be presented. The DC-stress test experiments have been performed at high current and high voltage settings in order to test the devices in the different regimes during large signal operation. GaN HEMTs and one stage MMICs have also been tested under RF-operation conditions and the correlation to DC-stress tests has been investigated.
Author(s)