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Reliability status of GaN transistors and MMICs in Europe

Status der Zuverlässigkeit von GaN Transistoren und MMICs in Europa
: Dammann, M.; Cäsar, M.; Konstanzer, H.; Waltereit, P.; Quay, R.; Bronner, W.; Kiefer, R.; Müller, S.; Mikulla, M.; Wel, P.J. van der; Rödle, T.; Bourgeois, F.; Riepe, K.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE International Reliability Physics Symposium, IRPS 2010. Vol.1 : Anaheim, California, USA, 2 - 6 May 2010
New York, NY: IEEE, 2010
ISBN: 1-4244-5430-1
ISBN: 978-1-4244-5430-3 (print)
International Reliability Physics Symposium (IRPS) <48, 2010, Anaheim/Calif.>
Conference Paper
Fraunhofer IAF ()
AlGaN/GaN HEMT; Zuverlässigkeit; DC-Alterung; RF-Alterung; HTRB-Alterung; Lebensdauer; reliability; DC-Stress; RF-Stress; HTRB-stress; life time

Recent DC- and RF-reliability results of European GaN HEMTs for high frequency power and MMIC applications between 2 and 18 GHz will be presented. The DC-stress test experiments have been performed at high current and high voltage settings in order to test the devices in the different regimes during large signal operation. GaN HEMTs and one stage MMICs have also been tested under RF-operation conditions and the correlation to DC-stress tests has been investigated.