Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

GaInAs/AlInAs-HEMTs grown on optical waveguide layers for photonic integrated circuits

 

:

IPRM '96. Eigth International Conference on Indium Phosphide and Related Materials. Proceedings
1996
pp.259-262
International Conference on Indium Phosphide and Related Materials (IPRM) <8, 1996, Schäbisch Gmünd>
English
Conference Paper
Fraunhofer HHI ()
aluminium compounds; cellular radio; gallium arsenide; HEMT integrated circuits; iii-v semiconductors; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical fabrication; optical receivers; optical waveguides; p-i-n photodiodes; photodetectors; semiconductor growth; sensitivity; GaInAs/AlInAs-HEMTs; optical waveguide layers; photonic integrated circuits; optical networks; fiber-fed cellular microwave mobile communication systems; high-speed optical receivers; high sensitivity; GaInAs-AlInAs high-electron mobility transistors; molecular beam epitaxy; mbe; metal-organic vapour phase epitaxy; movpe layers; low-noise amplifier circuits; optical receiver; 40 Gbit/s; GaInAs-AlInAs

Abstract
For optical networks in the 40 Gbit/s regime as well as in fiber-fed cellular microwave mobile communication systems high-speed optical receivers with high sensitivity are required. This work describes the development of GaInAs-AlInAs high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on metal-organic vapour phase epitaxy (MOVPE) layers. These devices are to be used in low-noise amplifier circuits as part of an optical receiver.

: http://publica.fraunhofer.de/documents/N-13321.html