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GaInAs/AlInAs-HEMTs grown on optical waveguide layers for photonic integrated circuits



IPRM '96. Eigth International Conference on Indium Phosphide and Related Materials. Proceedings
International Conference on Indium Phosphide and Related Materials (IPRM) <8, 1996, Schäbisch Gmünd>
Conference Paper
Fraunhofer HHI ()
aluminium compounds; cellular radio; gallium arsenide; HEMT integrated circuits; iii-v semiconductors; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical fabrication; optical receivers; optical waveguides; p-i-n photodiodes; photodetectors; semiconductor growth; sensitivity; GaInAs/AlInAs-HEMTs; optical waveguide layers; photonic integrated circuits; optical networks; fiber-fed cellular microwave mobile communication systems; high-speed optical receivers; high sensitivity; GaInAs-AlInAs high-electron mobility transistors; molecular beam epitaxy; mbe; metal-organic vapour phase epitaxy; movpe layers; low-noise amplifier circuits; optical receiver; 40 Gbit/s; GaInAs-AlInAs

For optical networks in the 40 Gbit/s regime as well as in fiber-fed cellular microwave mobile communication systems high-speed optical receivers with high sensitivity are required. This work describes the development of GaInAs-AlInAs high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on metal-organic vapour phase epitaxy (MOVPE) layers. These devices are to be used in low-noise amplifier circuits as part of an optical receiver.