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1996
Conference Paper
Titel
Influence of MOVPE growth conditions and substrate parameters on the structural quality of multi-period InGaAsP/InP MQW structures
Abstract
In this work we have investigated the MOVPE growth of multi-period InGaAsP/InP quantum confined Stark effect (QCSE) layer structures and provide evidence that the QCSE response can be influenced by optimizing the gas exchange procedure, mainly to minimize carry-over effects. Secondly, we present new results on the thermal stability behaviour of these MQW structures which appear to be strongly related with the underlying buffer layer and substrate material.
Tags
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gallium arsenide
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iii-v semiconductors
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indium compounds
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optical waveguides
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quantum confined stark effect
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semiconductor growth
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semiconductor quantum wells
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substrates
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thermal stability
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vapour phase epitaxial growth
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movpe growth conditions
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substrate parameters
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structural quality
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multi-period InGaAsP/InP mqw structures
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gas exchange procedure
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carry-over effects
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mqw structures
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buffer layer
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InGaAsP-InP