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27 GHz bandwidth integrated photoreceiver comprising a waveguide fed photodiode and a GaInAs/AlInAs-HEMT based travelling wave amplifier

 

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Asbeck, P. ; IEEE Electron Devices Society:
54th Annual Device Research Conference 1996. Digest : June 24 - 26, 1996, University of California, Santa Barbara, California
New York, NY: IEEE, 1996
ISBN: 0-7803-3358-6
ISBN: 0-7803-3359-4
pp.200-201
Device Research Conference (DRC) <54, 1996, Santa Barbara/Calif.>
English
Conference Paper
Fraunhofer HHI ()
aluminium compounds; gallium arsenide; HEMT integrated circuits; high-speed optical techniques; iii-v semiconductors; indium compounds; integrated optoelectronics; optical receivers; optical waveguide components; p-i-n photodiodes; travelling wave amplifiers; photoreceiver; waveguide fed pin photodiode; HEMT travelling wave amplifier; optical front-end; monolithic integration; high-speed optical receiver; oeic; 1.55 micron; 27 GHz; GaInAs-AlInAs

Abstract
Optical front-ends are considered to play a major role in future communication systems operating at bit rates of 20 or even 40 Gbit/s, as well as in mobile communication systems with fibre-optic distribution networks. Consequently, different approaches for the monolithic integration of high-speed receivers for a wavelength of 1.55 mu m can be found in the literature. In this paper, we report on the first monolithical integration of an optical receiver OEIC, which combines the advantageous high-speed characteristics of the waveguide integrated pin photodiode and of the travelling wave amplifier (TWA) circuit, both based on the InP material system.

: http://publica.fraunhofer.de/documents/N-13299.html