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Submicron InGaAs/InP MSM photodetectors for operation at 1.55 mu m

 

Interuniversity Micro-Electronics Center -IMEC-, Louvain:
21st European Conference on Optical Communication, ECOC '95. Proceedings. Vol.2: Regular papers & invited papers : Including Symposium on Photonic versus Electronic Technologies in Switching and Interconnection, Symposium on Broadband Networks for Video and Multimedia Services, ECOC 95 EEOC, Brussels, Belgium, 17 - 21 September 1995
Piscataway, NJ: IEEE, 1995
ISBN: 90-9008471-1
ISBN: 0-7803-2938-4
pp.677-680
European Conference on Optical Communication (ECOC) <21, 1995, Brüssel>
Symposium on Photonic versus Electronic Technologies in Switching and Interconnection <1995, Brüssel>
Symposium on Broadband Networks for Video and Multimedia Services <1995, Brüssel>
European Exhibition on Optical Communication (EEOC) <1, 1995, Brüssel>
English
Conference Paper
Fraunhofer HHI ()
electron beam lithography; gallium arsenide; iii-v semiconductors; indium compounds; metal-semiconductor-metal structures; optical communication equipment; optical receivers; photodetectors; submicron msm photodetectors; high speed optical communication networks; metal-semiconductor-metal detectors; wideband photoreceivers; specific capacitance; submicron feature size; absorption layer; low dark current; high external quantum yield; frequency response; 0.3 micron; 10 na; 40 GHz; 20 to 40 Gbit/s; 1.3 to 1.55 micron; InGaAs-InP; ingaal:fe; inp:fe

Abstract
The implementation of future high-speed optical communication networks operating in the 20-40 Gbit/s regime relies on the availability of correspondingly fast photodetectors for the 1.3-1.55 mu m wavelength range. Interdigitated InGaAs metal-semiconductor-metal (MSM) detectors in the InP material system are promising candidates for wideband photoreceivers due to their inherent lower specific capacitance as compared to p-i-n diodes. MSM photodetectors with submicron (0.3 mu m) feature size fabricated by electron beam lithography on 300 nm InGaAs absorption layer exhibit low dark current (<10 nA), a high external quantum yield (23%) and a frequency response up to 40 GHz at 1.55 mu m.

: http://publica.fraunhofer.de/documents/N-13288.html