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Highly reproducible and defect-free MOVPE overgrowth of InGaAsP-based DFB gratings

	Journal of Crystal Growth 170 (1997), No.1-4, pp.113-116 ISSN: 0022-0248
	International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) <8, 1996, Cardiff>

	English
	Conference Paper, Journal Article
	Fraunhofer HHI ()
	diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; sputter etching; surface structure; vapour phase epitaxial growth; movpe overgrowth; dfb gratings; reactive ion etching; growth temperature dependence; growth rate dependence; v iii ratio; 450 to 650 c; InP-InGaAsP

Abstract
The paper reports on a study aiming to develop a highly reproducible process for the MOVPE overgrowth of first-order gratings made by reactive ion etching in InGaAsP. MOVPE parameters were elaborated, which guarantee both nearly perfect preservation of the gratings and an almost defect-free surface of the regrown InP layer. Whereas the former goal calls for a low growth temperature, the latter was found to be achievable only above a critical growth temperature depending on the growth rate adjusted. As a good compromise, a regrowth starting temperature of 550 degrees C and an extremely high V/III ratio in the initial stage of regrowth have been chosen. Furthermore, a well-adjusted concentration of AsH3 has been added during the heat-up cycle.