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Ultrafast monolithically integrated InP-based photoreceiver: OEIC-design, fabrication, and system application
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HEMT integrated circuits
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high-speed optical techniques
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iii-v semiconductors
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indium compounds
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integrated circuit design
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integrated circuit packaging
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integrated optoelectronics
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optical design techniques
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optical fabrication
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optical noise
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optical receivers
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p-i-n photodiodes
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sensitivity
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time division multiplexing
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ultrafast monolithically integrated InP-based photoreceiver
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oeic-design
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optical waveguide-fed pin-photodiode
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system application
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InP-based photoreceiver oeic
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receiver design
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receiver fabrication
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coplanar traveling-wave amplifier
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GaInAs-AlInAs-InP-HEMT's
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external quantum efficiency
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db power bandwidth
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gate length
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semi-insulating optical waveguide layers
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cutoff frequencies
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zero gate bias
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traveling-wave amplifiers
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receiver oeic packaging
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fiber pigtail
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gb/s transmission system
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overall system sensitivity
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signal transmission
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dispersion shifted fiber
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1.55 mum
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27 GHz
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30 percent
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35 GHz
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0.7 mum
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20 Gbit/s
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198 km
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InP
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GaInAs-AlInAs-InP