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Electrical properties of SrS:Ce EL devices


Journal of the Society for Information Display 4 (1996), No.4, pp.293-297
ISSN: 1071-0922
International Conference on the Science and Technology of Display Phosphors <1, 1995, San Diego/Calif.>
Conference Paper, Journal Article
Fraunhofer HHI ()
cerium; electroluminescence; electroluminescent devices; phosphors; strontium compounds; srs:ce el devices; luminance; power consumption; efficiency; actfel; photoinduced transferred charge; phosphor layer thicknesses; ce doping concentration; phosphor layer; emission; leading edge; voltage pulse; trailing-edge response; space-charge formation; phosphor thickness; photo-induced charge response; direct excitation; high electric fields; peak voltage; pq response; sense parameter; mean electric field; 380 to 890 nm; 700 nm; srs:ce

Luminance, transferred charge, photo-induced transferred charge, and efficiency are analyzed for SrS:Ce, Cl EL devices with different phosphor layer thicknesses. At a constant Ce doping concentration of 0.05 at.%, the width of the phosphor layer is varied from 380 to 890 nm. It is found that the increase of luminance with higher phosphor thickness is mainly attributed to an increasing emission at the leading edge of the voltage pulse, whereas the trailing-edge response is comparable in all samples. The decrease of the EL efficiency at higher peak voltage is due to a strong space-charge formation in the phosphor layer. Highest EL efficiency is obtained at a phosphor thickness of around 700 nm. The photo-induced charge (PQ) response due to the direct excitation ( lambda exc=430 nm) of Ce3+ in high electric fields is investigated as a function of peak voltage. As a result, the PQ response behaves like a sense parameter for the mean electric field of the phosphor layer.