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1997
Conference Paper
Titel
MBE regrowth of InP on patterned surfaces and its application potential for optoelectronic devices
Abstract
High-quality InP material was grown with solid source molecular beam epitaxy (SSMBE) using a GaP source. Dry- as well as wet-etched corrugated quaternary surfaces (DFB-gratings) were successfully regrown with InP, fully planarized final surfaces were obtained in each case. Finally, InP regrowth on mesa structures demonstrates favourable conditions for butt-coupling integration schemes.
Tags
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diffraction gratings
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iii-v semiconductors
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indium compounds
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molecular beam epitaxial growth
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optical fabrication
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semiconductor growth
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mbe regrowth
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patterned surface
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optoelectronic device
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solid source molecular beam epitaxy
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dry etching
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wet etching
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corrugated quaternary surface
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dfb grating
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planarization
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mesa structure
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butt-coupling integration
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inp