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MOMBE growth of semi-insulating GaInAsP(lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices


IEEE Electron Devices Society; IEEE Lasers and Electro-Optics Society:
International Conference on Indium Phosphide and Related Materials, IPRM, 1997. Conference proceedings : 11 - 15 May 1997, Tara Hyanns Hotel and Resort Hyannis, Cape Cod, Massachusetts, USA
Piscataway, NJ: IEEE, 1997
ISBN: 0-7803-3898-7
ISBN: 0-7803-3899-5
ISBN: 0-7803-3900-2
International Conference on Indium Phosphide and Related Materials (IPRM) <9, 1997, Hyannis/Mass.>
Conference Paper
Fraunhofer HHI ()
chemical beam epitaxial growth; doping profiles; electrical resistivity; gallium arsenide; iii-v semiconductors; indium compounds; integrated optics; iron; optical fabrication; optical losses; optical waveguides; photoluminescence; secondary ion mass spectra; semiconductor doping; semiconductor growth; GaInAsP:fe optical waveguides; integrated photonic devices; mombe growth; semi-insulating GaInAsP; effusion cell; growth temperature; doping concentration; electrical properties; optical properties; high optical quality; excitonic emission; resistivities; sims measurements; homogeneous incorporation behaviour; fe doping; GaInAsP/InP waveguide structures; selective deposition; low optical losses; 1.05 mum; 455 to 505 c; 10 k; 1e9 ohmcm; 5e7 ohmcm; GaInAsP:fe-InP; inp:fe

Iron doping using elemental source material evaporated from a conventional effusion cell was applied during MOMBE growth of semi-insulating InP and GaInAsP( lambda =1.05 mu m) for waveguide applications. The influence of the growth temperature and the doping concentration on the electrical and optical properties was investigated in the range from 455 degrees C to 505 degrees C and 5.1015 cm-3 to 5.1015 cm-3, respectively. High optical quality is demonstrated by the appearance of excitonic emission in iron doped layers at 10 K. Resistivities in excess of 109 Omega cm were obtained for both materials at medium doping levels grown at the lower end of the investigated growth temperature range. In addition, SIMS measurements revealed homogeneous incorporation behaviour of the iron dopant in these materials. A tendency towards some accumulation/segregation of the iron dopant was observed at higher doping levels and growth temperatures resulting in some decrease of the resistivity. GaInAsP/InP waveguide structures grown at 485 degrees C (which is the minimum temperature necessary for selective deposition) showed resistivities of 5.107 Omega .cm7 in combination with low optical losses of 2.5+or-0.5 dB/cm.