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  4. Polarization independent integrated mode transformer for uncladded InGaAsP/InP rib waveguides without epitaxial regrowth
 
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1996
Conference Paper
Title

Polarization independent integrated mode transformer for uncladded InGaAsP/InP rib waveguides without epitaxial regrowth

Abstract
A polarization insensitive fibre port for integration in complex PICs has been demonstrated. The spot-size transformation is performed by a thickness taper integrated with an uncladded InGaAsP/InP rib waveguide in cooperation with guiding layers in the waveguide buffer. No epitaxial overgrowth is necessary to achieve polarization independent coupling. The thickness taper is structured by using shadow mask ion beam etching. The first fabricated integrated spot size transformers show a polarization independent coupling loss of 2.3+or-0.2 dB (butt coupled cleaved fibre). The radiation loss along the waveguide taper amounts to 0.6 dB. The -1 dB-alignment tolerances are larger than +or-2.4 mu m. A theoretical coupling loss of 1 dB is predicted for an optimized waveguide shape. The high yield fabrication process is suited for integration of the spot size transformer in complex PICs.
Author(s)
Albrecht, P.
Heidrich, H.
Löffler, R.
Mörl, L.
Reier, F.
Weinert, C.M.
Mainwork
22nd European Conference on Optical Communication 1996. Vol.2: Regular and invited papers  
Conference
European Conference on Optical Communication (ECOC) 1996  
European Exhibition on Optical Communication (EEOC) 1996  
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • gallium arsenide

  • iii-v semiconductors

  • indium compounds

  • integrated optics

  • optical couplers

  • optical fabrication

  • optical losses

  • rib waveguides

  • sputter etching

  • polarization independent integrated mode transformer

  • uncladded InGaAsP/InP rib waveguides

  • core thickness tapering

  • coupling loss

  • alignment tolerances

  • flat-end fibres

  • photonic ic

  • polarization insensitive fibre port

  • integration

  • spot-size transformation

  • thickness taper

  • guiding layers

  • waveguide buffer

  • polarization independent coupling

  • shadow mask ion beam etching

  • radiation loss

  • optimized waveguide shape

  • high yield fabrication process

  • 2.1 to 2.5 db

  • 0.6 db

  • InGaAsP-InP

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