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1996
Conference Paper
Titel
Study of carrier transport in SrS:Ce,Mn,Cl electroluminescent devices by optical method
Abstract
The carrier transport in SrS:Ce,Mn,Cl EL-devices was investigated by analyzing the behavior of photo-generated electron-hole-pairs in an electric field. The low field transport of electrons and holes obeys Ohm's law, and the high field transport is characterized by polar scattering on optical phonons leading to the saturation of the carrier drift velocity. Around the EL threshold field a huge increase of electron current occurs due to electron multiplication. A multiplication factor of 34*104 cm-1 was found for fields around the threshold using a simple model. The multiplication is based on defect ionization. The ionized defects are responsible for space charges which have been already observed in EL-devices based on SrS:Ce.
Language
English
Tags
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cerium
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chlorine
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electroluminescent devices
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electron mobility
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electron-phonon interactions
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high field effects
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hole mobility
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manganese
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photoconductivity
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space-charge-limited conduction
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strontium compounds
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carrier transport
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photo-generated electron-hole-pairs
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low field transport
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ohm's law
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high field transport
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polar optical phonon scattering
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carrier drift velocity
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electron multiplication
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defect ionization
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space charges