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Low-noise amplifiers in d-band using 100 nm and 50 nm mHEMT technology
|Institute of Electrical and Electronics Engineers -IEEE-:|
German Microwave Conference, GeMIC 2010 : Berlin, Germany, 15 - 17 March 2010
Piscataway/NJ: IEEE, 2010
|German Microwave Conference (GeMiC) <5, 2010, Berlin>|
| Conference Paper|
|Fraunhofer IAF ()|
| MMIC; mHEMTS; MHEMT; D-band; millimeter wave imaging|
This paper presents two low-noise amplifiers in D-band (110-170 GHz) using metamorphic high electron mobility transistor (mHEMT) technology with gate lengths of 100 nm and 50 nm for applications in passive millimeter-wave imaging. Both amplifiers consist of four transistor stages with a gate width of 2 × 15 µm, each. The chip sizes are 1.0 × 2.0 mm2. The circuit design and the impedance matching networks are described in detail and the simulations of the scattering parameters and the noise figure are compared to D-band measurements. A small signal gain of 18-21 dB over a bandwidth of 30 GHz and 20-26 dB in a narrowband design was achieved. Both amplifiers demonstrated a measured noise figure of well below 4 dB.