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Low-noise amplifiers in d-band using 100 nm and 50 nm mHEMT technology

 
: Weissbrodt, E.; Kallfass, I.; Weber, R.; Tessmann, A.; Massler, H.; Leuther, A.

Institute of Electrical and Electronics Engineers -IEEE-:
German Microwave Conference, GeMIC 2010 : Berlin, Germany, 15 - 17 March 2010
Piscataway/NJ: IEEE, 2010
ISBN: 978-1-4244-4933-0
ISBN: 978-3-9812-6681-8
pp.55-58
German Microwave Conference (GeMiC) <5, 2010, Berlin>
English
Conference Paper
Fraunhofer IAF ()
MMIC; mHEMTS; MHEMT; D-band; millimeter wave imaging

Abstract
This paper presents two low-noise amplifiers in D-band (110-170 GHz) using metamorphic high electron mobility transistor (mHEMT) technology with gate lengths of 100 nm and 50 nm for applications in passive millimeter-wave imaging. Both amplifiers consist of four transistor stages with a gate width of 2 × 15 µm, each. The chip sizes are 1.0 × 2.0 mm2. The circuit design and the impedance matching networks are described in detail and the simulations of the scattering parameters and the noise figure are compared to D-band measurements. A small signal gain of 18-21 dB over a bandwidth of 30 GHz and 20-26 dB in a narrowband design was achieved. Both amplifiers demonstrated a measured noise figure of well below 4 dB.

: http://publica.fraunhofer.de/documents/N-131661.html