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InAs/GaSb type II superlattices for advanced 2nd and 3rd generation detectors

: Walther, M.; Rehm, R.; Schmitz, J.; Fleissner, J.; Rutz, F.; Kirste, L.; Scheibner, R.; Wendler, J.; Ziegler, J.


Razeghi, M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Quantum sensing and nanophotonic devices VII : 24-28 January 2010, San Francisco, California, United States
Bellingham, WA: SPIE, 2010 (Proceedings of SPIE 7608)
ISBN: 978-0-8194-8004-0
Paper 76081Z
Conference "Quantum Sensing and Nanophotonic Devices" <7, 2010, San Francisco/Calif.>
Conference Paper
Fraunhofer IAF ()
infrared camera; focal plane array; bispektral; bispectral; dual-color; InAs/GaSb type II superlattice; GaSb substrate; thermal imaging; missle approach warning

InAs/GaSb short-period superlattices (SL) based on GaSb, InAs and AlSb have proven their great potential for high performance infrared detectors. Lots of interest is currently focused on the development of short-period InAs/GaSb SLs for advanced 2nd and 3rd generation infrared detectors between 3 - 30 µm. For the fabrication of mono- and bispectral thermal imaging systems in the mid-wavelength infrared region (MWIR) a manufacturable technology for high responsivity thermal imaging systems has been developed. InAs/GaSb short-period superlattices can be fabricated with up to 1000 periods in the intrinsic region without revealing diffusion limited behavior. This enables the fabrication of InAs/GaSb SL camera systems with high responsivity comparable to state of the art CdHgTe and InSb detectors. The material system is also ideally suited for the fabrication of dual-color MWIR/MWIR InAs/GaSb SL camera systems with high quantum efficiency for missile approach warning systems with simultaneous and spatially coincident detection in both spectral channels.