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Selective MOMBE growth behaviour at the lateral interface of waveguide/laser butt-joints


EW MOVPE VII, 7th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques 1997. Workshop booklet : Berlin, June 8 - 11, 1997
Berlin, 1997
pp.C6 4
European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques (EW MOVPE) <7, 1997, Berlin>
Conference Paper
Fraunhofer HHI ()
desorption; etching; gallium arsenide; iii-v semiconductors; indium compounds; integrated optics; interface structure; joining processes; masks; molecular beam epitaxial growth; optical couplers; optical fabrication; optical waveguides; semiconductor growth; semiconductor lasers; selective mombe growth; lateral interface; waveguide/laser butt-joints; InP-GaInAsP optical waveguide structure; butt coupling; double heterostructure laser; growth temperature; sinx mask; laser mesa; native oxide desorption; growth conditions; v/iii-ratio; undercut etching; uniform waveguide deposition; mesa edge; lateral growth rate; vertical growth rate; reduced excessive growth; vertical mask; monolithic photonic integrated circuits; 485 degc; InP-GaInAsP

Selective MOMBE growth of InP-GaInAsP optical waveguide structures by MOMBE was studied for butt coupling with a double heterostructure (DH) laser. Selective deposition was accomplished at a growth temperature of 485 degrees C using SiNx for masking the laser mesa on top and partially on the side walls. The influence of the native oxide desorption process, the growth conditions (V/III-ratio) and undercut etching of the vertical part of the mask was investigated. Uniform waveguide deposition even at the mesa edges of the laser, a low lateral growth rate of approximately 20 percent of the vertical rate and reduced excessive growth near the edge of the vertical mask were successfully achieved.