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1997
Conference Paper
Titel
Selective MOMBE growth behaviour at the lateral interface of waveguide/laser butt-joints
Abstract
Selective MOMBE growth of InP-GaInAsP optical waveguide structures by MOMBE was studied for butt coupling with a double heterostructure (DH) laser. Selective deposition was accomplished at a growth temperature of 485 degrees C using SiNx for masking the laser mesa on top and partially on the side walls. The influence of the native oxide desorption process, the growth conditions (V/III-ratio) and undercut etching of the vertical part of the mask was investigated. Uniform waveguide deposition even at the mesa edges of the laser, a low lateral growth rate of approximately 20 percent of the vertical rate and reduced excessive growth near the edge of the vertical mask were successfully achieved.
Language
English
Tags
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desorption
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etching
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gallium arsenide
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iii-v semiconductors
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indium compounds
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integrated optics
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interface structure
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joining processes
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masks
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molecular beam epitaxial growth
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optical couplers
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optical fabrication
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optical waveguides
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semiconductor growth
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semiconductor lasers
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selective mombe growth
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lateral interface
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waveguide/laser butt-joints
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InP-GaInAsP optical waveguide structure
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butt coupling
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double heterostructure laser
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growth temperature
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sinx mask
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laser mesa
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native oxide desorption
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growth conditions
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v/iii-ratio
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undercut etching
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uniform waveguide deposition
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mesa edge
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lateral growth rate
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vertical growth rate
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reduced excessive growth
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vertical mask
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monolithic photonic integrated circuits
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485 degc
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InP-GaInAsP