Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Evaluation of defect densities on LP-MOVPE grown InGaAsP in dependence of InP substrate type

 
: Franke, D.; Grote, N.

EW MOVPE VII, 7th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques 1997. Workshop booklet : Berlin, June 8 - 11, 1997
Berlin, 1997
pp.G4 4
European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques (EW MOVPE) <7, 1997, Berlin>
English
Conference Paper
Fraunhofer HHI ()
crystal orientation; gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; point defects; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; defect densities; lp-movpe grown InGaAsP; InP substrate type; growth defects; substrate orientation; surface growth defects; dopant type; growth defect density; defect type; InGaAsP; inp

Abstract
Although an assessment of growth defects appears to be a very complex matter due to the various growth and substrate parameters and the statistics involved this study has shown that the substrate orientation has a major impact on the type and density of surface growth defects. The dopant type of the substrate has the main effect on the EPD and, along with this, on the growth defect density, but no effect on the defect type.

: http://publica.fraunhofer.de/documents/N-13163.html