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1997
Conference Paper
Titel
MOVPE growth of a polarisation independent electro-optic GaInAs/AlInAs tunnelling barrier MQW waveguide structure
Abstract
The realisation of TBQW structures requires material of optimised optical, electrical and structural properties. Therefore investigations on the MOVPE growth conditions were carried out which is be reported following a brief discussion of the TBQW structure and related design aspects. Experimental results of a Mach-Zehnder interferometer type TBQW optical switch is presented demonstrating the achievement of polarisation independent electro-optic switching behaviour.
Language
English
Tags
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aluminium compounds
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electro-optical switches
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gallium arsenide
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iii-v semiconductors
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indium compounds
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mach-zehnder interferometers
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optical waveguides
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semiconductor growth
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semiconductor superlattices
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tunnelling
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vapour phase epitaxial growth
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movpe growth
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polarisation independent electro-optic GaInAs/AlInAs tunnelling barrier mqw waveguide structure
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tbqw structures
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movpe growth conditions
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mach-zehnder interferometer type tbqw optical switch
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polarisation independent electro-optic switching behaviour
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GaInAs-AlInAs