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MOVPE growth of a polarisation independent electro-optic GaInAs/AlInAs tunnelling barrier MQW waveguide structure

 

EW MOVPE VII, 7th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques 1997. Workshop booklet : Berlin, June 8 - 11, 1997
Berlin, 1997
pp.G11 4
European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques (EW MOVPE) <7, 1997, Berlin>
English
Conference Paper
Fraunhofer HHI ()
aluminium compounds; electro-optical switches; gallium arsenide; iii-v semiconductors; indium compounds; mach-zehnder interferometers; optical waveguides; semiconductor growth; semiconductor superlattices; tunnelling; vapour phase epitaxial growth; movpe growth; polarisation independent electro-optic GaInAs/AlInAs tunnelling barrier mqw waveguide structure; tbqw structures; movpe growth conditions; mach-zehnder interferometer type tbqw optical switch; polarisation independent electro-optic switching behaviour; GaInAs-AlInAs

Abstract
The realisation of TBQW structures requires material of optimised optical, electrical and structural properties. Therefore investigations on the MOVPE growth conditions were carried out which is be reported following a brief discussion of the TBQW structure and related design aspects. Experimental results of a Mach-Zehnder interferometer type TBQW optical switch is presented demonstrating the achievement of polarisation independent electro-optic switching behaviour.

: http://publica.fraunhofer.de/documents/N-13161.html