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Acid diffusion effects between resists in freezing processes used for contact hole patterning

: Fuhrmann, J.; Fiebach, A.; Erdmann, A.; Trefonas, P.


Ronse, K.:
The 35th International Conference on Micro- and Nano-Engineering, MNE 2009 : September 28 -1 October, 2009, Ghent, Belgium
Amsterdam: Elsevier, 2010 (Microelectronic engineering 87.2010, Nr.5-8)
ISSN: 0167-9317
International Conference on Micro and Nano Engineering (MNE 2009) <35, 2009, Ghent>
Conference Paper, Journal Article
Fraunhofer IISB ()
double patterning; post exposure bake; 3D simulation

Double patterning following an litho-litho-etch scheme is a possible option to create structure widths below the nominal resolution of optical light with current exposure technology. Interactions between the first and second resist layers may influence the final structure created. In this paper, we perform a model based investigation of the possible consequences of the diffusion of photo-generated acid from the second resist to the first one. As a consequence, less acid is available for the deprotection reaction, and we observe a tendency to an increase of the CD values of the primary structure. We attempt to explain observed footing effects in contact holes by this effect.