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Hemispherical thin-film transistor passive pixel sensors

: Yoo, G.; Fung, T.C.; Radtke, D.; Stumpf, M.; Zeitner, U.; Kanicki, J.


Sensors and Actuators. A 158 (2010), No.2, pp.280-283
ISSN: 0924-4247
Journal Article
Fraunhofer IOF ()
thin-film transistor; non-planar surface; Image sensor circuit

Hemispherical image sensors are very promising technology for cameras, surveillance systems and artificial vision. We report on the electrical performance of the hydrogenated amorphous silicon thin-film transistor passive pixel image sensor (PPS) circuits fabricated on a hemispherical substrate using maskless laser-write lithography (LWL). The level-to-level registration and alignment over the curved surface with a high accuracy are demonstrated for the LWL in this work. The obtained results clearly show that it is possible to realize active-matrix PPS with a 150 mu m pixel pitch and a dynamic range of about 40 dB that is suitable for hemispherical image sensors.