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1998
Journal Article
Titel
Metalorganic molecular beam epitaxial growth of semi-insulating GaInAsP( lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices
Abstract
Iron doping of InP and GaInAsP( lambda g=1.05 mu m) layers grown by metalorganic molecular beam epitaxy was studied using elemental source material in combination with a conventional effusion cell. This study was aimed at the creation of semi-insulating optical waveguides under growth conditions compatible with selective area growth. Secondary ion mass spectroscopy measurements revealed a reproducible and homogeneous incorporation behavior of the iron dopant in the materials investigated. Resistivities in excess of 109 Omega cm were obtained for both compositions at medium doping levels. GaInAsP/InP waveguide structures grown at 485 degrees C-the minimum temperature necessary for selective deposition-exhibited averaged resistivities of 5*107 Omega cm in combination with optical losses of 2.5+or-0.5 dB/cm.
Tags
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chemical beam epitaxial growth
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electrical resistivity
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gallium arsenide
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gallium compounds
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iii-v semiconductors
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indium compounds
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integrated optoelectronics
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iron
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optical losses
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optical waveguides
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secondary ion mass spectra
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semiconductor doping
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semiconductor growth
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metalorganic molecular beam epitaxial growth
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mombe
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integrated photonic devices
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iron doping
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elemental source material
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effusion cell
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semi-insulating optical waveguides
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secondary ion mass spectroscopy
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incorporation behaviour
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resistivities
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doping levels
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GaInAsP/InP waveguide structures
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1.05 mum
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1e9 ohmcm
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485 c
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5e7 ohmcm