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Selective MOMBE growth of InP-based waveguide/laser butt-joints


Journal of Crystal Growth 192 (1998), No.1-2, pp.56-62
ISSN: 0022-0248
Journal Article
Fraunhofer HHI ()
chemical beam epitaxial growth; gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; optical planar waveguides; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; waveguide lasers; indium phosphide; passive optical waveguide structure; butt coupling; active laser waveguide; selective deposition; organic molecular beam epitaxy regrowth; oxide desorption; growth temperature; temperature dependence; growth rate; threshold current; photonic integration; sem; 485 c; 980 micron; InP-GaInAsP

Selective metal organic molecular beam epitaxy regrowth of InP/GaInAsP passive optical waveguide structures was studied to accomplish butt coupling to an active laser waveguide. Selective deposition of the passive waveguide layer stack around a masked laser mesa was performed at a growth temperature of 485 degrees C. The influence of the native oxide desorption process of the V/III-ratio during growth and of a slight undercut etching was investigated. Uniform waveguide deposition was successfully achieved even at the edges of the laser mesa, specifically in the vicinity of the active layers. The lateral growth rate was reduced to approximately 20% of the vertical rate and enhanced growth near the edge of the mask was completely suppressed. The high quality of the implemented butt-joint was demonstrated on Fabry-Perot lasers comprising an active and a butt coupled passive waveguide section. An increase of the threshold current by only 25% for a 980 mu m long passive section as compared with a laser without a passive section was obtained.