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1998
Conference Paper
Titel
InGaAs photodetector with integrated biasing network for mm-wave applications
Abstract
xi A waveguide integrated photodetector with an integrated biasing network is presented. The external responsivity amounts to 0.3 A/W while the bandwidth is 70 GHz. The integration of a matching resistor significantly reduces the output standing wave ratio. Application of the photodetector in a mm-wave system experiment is demonstrated. Linear operation at 64 GHz up to power levels of +10 dBm was achieved.
Tags
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gallium arsenide
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iii-v semiconductors
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indium compounds
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integrated optoelectronics
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microwave links
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microwave photonics
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millimetre wave detectors
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mobile communication
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optical planar waveguides
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optical receivers
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p-i-n photodiodes
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photodetectors
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waveguide integrated photodetector
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integrated biasing network
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external responsivity
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bandwidth
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output standing wave ratio
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linear operation
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70 GHz
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64 GHz
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InGaAs