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50 Gbit/s InP-based photoreceiver OEIC with gain flattened transfer characteristics

 

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EEOC '98. 24th European Conference on Optical Communication. Vol. 1
Madrid: Telefonica de Espana S.A., 1998
ISBN: 84-89900-14-0
ISBN: 0-7803-5227-0
pp.55-56
European Conference on Optical Communication (ECOC) <24, 1998, Madrid>
European Exhibition on Optical Communication (EEOC) <4, 1998, Madrid>
English
Conference Paper
Fraunhofer HHI ()
electron beam lithography; HEMT integrated circuits; iii-v semiconductors; indium compounds; integrated circuit technology; integrated optoelectronics; optical fabrication; optical receivers; photodiodes; Gbit/s InP-based photoreceiver oeic; gain flattened transfer characteristics; InP-based photoreceiver oeic; bit/s data rate applications; waveguide-integrated photodiode; gain flattened distributed amplifier; HEMTs; e-beam lithography; HEMT ic; 50 Gbit/s; inp

Abstract
An InP-based photoreceiver OEIC for >or=40 Gbit/s data rate applications is presented. Besides a waveguide-integrated photodiode it contains a 38 GHz gain flattened distributed amplifier, which is composed of four HEMTs, fabricated by e-beam lithography.

: http://publica.fraunhofer.de/documents/N-13055.html