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1998
Conference Paper
Titel
50 Gbit/s InP-based photoreceiver OEIC with gain flattened transfer characteristics
Abstract
An InP-based photoreceiver OEIC for >or=40 Gbit/s data rate applications is presented. Besides a waveguide-integrated photodiode it contains a 38 GHz gain flattened distributed amplifier, which is composed of four HEMTs, fabricated by e-beam lithography.
Tags
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electron beam lithography
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HEMT integrated circuits
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iii-v semiconductors
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indium compounds
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integrated circuit technology
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integrated optoelectronics
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optical fabrication
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optical receivers
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photodiodes
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Gbit/s InP-based photoreceiver oeic
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gain flattened transfer characteristics
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InP-based photoreceiver oeic
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bit/s data rate applications
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waveguide-integrated photodiode
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gain flattened distributed amplifier
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HEMTs
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e-beam lithography
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HEMT ic
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50 Gbit/s
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inp