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Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMS

: Harde, P.; Gibis, R.; Kaiser, R.; Kizuki, H.; Kunzel, H.


Journal of Crystal Growth 201-202 (1999), pp.719-722
ISSN: 0022-0248
International Conference on Molecular Beam Epitaxy <10, 1998, Cannes>
Conference Paper, Journal Article
Fraunhofer HHI ()
buried layers; chemical beam epitaxial growth; gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; iron; scanning electron microscopy; secondary ion mass spectra; semiconductor doping; semiconductor growth; semiconductor lasers; waveguide junctions; Fe spatial distribution; metalorganic MBE; laterally resolved sims; laterally resolved secondary ion mass spectra; selective regrowth; selective epitaxy; MOMBE; metal-organic molecular beam epitaxy; SEM; Fe incorporation; waveguide structure; buried heterostructure laser; epitaxial layers; (Ga)In(As)P:Fe

The regrowth behaviour of and dopant diffusion in (Ga)In(As)P:Fe layers selectively deposited by metalorganic MBE was assessed. Device quality regrowth and the absence of lateral diffusion and accumulation effects is demonstrated as an essential feature for the fabrication of InP-based optoelectronic devices.