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Traveling wave electrodes for 50 GHz operation of opto-electronic devices based on InP

 

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Institute of Electrical and Electronics Engineers -IEEE-, Switzerland Section; IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society:
IPRM 1999, Eleventh International Conference on Indium Phosphide and Related Materials. Conference proceedings : May 16 - 20, 1999, Congress Center Davos, Davos, Switzerland
Piscataway: IEEE Operations Center, 1999
ISBN: 0-7803-5562-8
ISBN: 0-7803-5563-6
ISBN: 0-7803-5564-4
pp.385-388
International Conference on Indium Phosphide and Related Materials (IPRM) <11, 1999, Davos>
English
Conference Paper
Fraunhofer HHI ()
electro-optical switches; electrodes; electroplated coatings; iii-v semiconductors; indium compounds; mach-zehnder interferometers; semiconductor device metallisation; traveling wave electrode; optoelectronic device; electro-optic switch; mach-zehnder interferometer; loss parameter; electroplated metallization; bandwidth; 50 GHz; 100 Gbit/s; inp

Abstract
We report on the design, fabrication and performance electro-optic switches based on a Mach-Zehnder interferometer with traveling wave electrodes. Our work aimed at increasing the bandwidth of such devices by reducing the loss parameter a of the electrodes. We realized an electrode configuration using electro-plated metallization layers and achieved a bandwidth of 50 GHz (6.4 dB electrical corresponding to 3 dB optical) suitable for the operation of optoelectronic devices up to 100 Gb/s.

: http://publica.fraunhofer.de/documents/N-13008.html