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1999
Conference Paper
Titel
Traveling wave electrodes for 50 GHz operation of opto-electronic devices based on InP
Abstract
We report on the design, fabrication and performance electro-optic switches based on a Mach-Zehnder interferometer with traveling wave electrodes. Our work aimed at increasing the bandwidth of such devices by reducing the loss parameter a of the electrodes. We realized an electrode configuration using electro-plated metallization layers and achieved a bandwidth of 50 GHz (6.4 dB electrical corresponding to 3 dB optical) suitable for the operation of optoelectronic devices up to 100 Gb/s.
Tags
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electro-optical switches
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electrodes
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electroplated coatings
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iii-v semiconductors
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indium compounds
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mach-zehnder interferometers
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semiconductor device metallisation
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traveling wave electrode
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optoelectronic device
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electro-optic switch
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mach-zehnder interferometer
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loss parameter
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electroplated metallization
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bandwidth
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50 GHz
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100 Gbit/s
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inp