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MOMBE: Superior epitaxial growth for InP-based monolithically integrated photonic circuits

: Gibis, R.; Kizuki, H.; Albrecht, P.; Harde, P.; Urmann, G.; Kaiser, R.; Kunzel, H.


Journal of Crystal Growth 209 (2000), No.2-3, pp.463-470
ISSN: 0022-0248
International Conference on Chemical Beam Epitaxy and Related Growth Techniques (ICCBE) <7, 1999, Tsukuba>
Conference Paper, Journal Article
Fraunhofer HHI ()
iii-v semiconductors; indium compounds; integrated optoelectronics; interface structure; molecular beam epitaxial growth; optical planar waveguides; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; metal organic molecular beam epitaxy; epitaxial growth; fabrication process; integrated photonic circuits; semiinsulating layers; fe-doped layers; selective area deposition; composition dependence; semiinsulating waveguides; laser waveguide butt-joints; lateral growth interface; optoelectronic integration; sem; scanning electron microscopy; (gain)(asp):fe; InP:Fe

Basic developmental steps are outlined for the application of metal organic molecular beam epitaxy as an epitaxial fabrication process for InP-based integrated photonic circuits. Besides high-quality performance of the individual devices, implementation of Fe-doped semi-insulating layers and selective area deposition of GaInAsP for the whole composition range are of concern. Low-loss semi-insulating waveguides were fabricated for optically interconnecting and electrically isolating different devices at deposition conditions that have proven adequate for selective area growth and, simultaneously, for effective suppression of Fe-movement. Fabricated laser/waveguide butt-joints, a basic building block for any integrated photonic circuit, demonstrate the potential of metal organic molecular beam epitaxy to form practically ideal lateral growth interfaces without compromising on device performance.