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2000
Journal Article
Titel
MOMBE: Superior epitaxial growth for InP-based monolithically integrated photonic circuits
Abstract
Basic developmental steps are outlined for the application of metal organic molecular beam epitaxy as an epitaxial fabrication process for InP-based integrated photonic circuits. Besides high-quality performance of the individual devices, implementation of Fe-doped semi-insulating layers and selective area deposition of GaInAsP for the whole composition range are of concern. Low-loss semi-insulating waveguides were fabricated for optically interconnecting and electrically isolating different devices at deposition conditions that have proven adequate for selective area growth and, simultaneously, for effective suppression of Fe-movement. Fabricated laser/waveguide butt-joints, a basic building block for any integrated photonic circuit, demonstrate the potential of metal organic molecular beam epitaxy to form practically ideal lateral growth interfaces without compromising on device performance.
Tags
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iii-v semiconductors
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indium compounds
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integrated optoelectronics
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interface structure
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molecular beam epitaxial growth
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optical planar waveguides
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semiconductor doping
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semiconductor epitaxial layers
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semiconductor growth
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metal organic molecular beam epitaxy
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epitaxial growth
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fabrication process
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integrated photonic circuits
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semiinsulating layers
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fe-doped layers
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selective area deposition
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composition dependence
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semiinsulating waveguides
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laser waveguide butt-joints
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lateral growth interface
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optoelectronic integration
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sem
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scanning electron microscopy