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Monolithic integration of lasers, photodiodes, waveguides and spot size converters on GaInAsP/InP for photonic IC applications

: Hamacher, M.; Kaiser, R.; Heidrich, H.; Albrecht, P.; Borchert, B.; Janiak, K.; Loffler, R.; Malchow, S.; Rehbein, W.; Schroeter-Janssen, H.

DOI: 10.1109/ICIPRM.2000.850220

	IEEE Electron Devices Society: International Conference on Indium Phosphide and Related Materials 2000. Conference proceedings : 14 - 18 May 2000, Williamsburg Marriott, Williamsburg, Virginia, USA Piscataway, NJ: IEEE, 2000 ISBN: 0-7803-6320-5 ISBN: 0-7803-6321-3 ISBN: 0-7803-6322-1 pp.21-24
	International Conference on Indium Phosphide and Related Materials (IPRM) <12, 2000, Williamsburg/Va.>

	English
	Conference Paper
	Fraunhofer HHI ()
	distributed feedback lasers; gallium arsenide; iii-v semiconductors; indium compounds; integrated optics; optical waveguides; photodiodes; transceivers; monolithic integration; wavelength selective photodiode; waveguide y-junction; spot size converter; GaInAsP/InP photonic ic; complex coupled dfb laser; optical transceiver; 1.3 micron; 1.55 micron; GaInAsP-InP

Abstract
This paper reports on 1.3 mu m complex coupled DFB lasers, 1.55 mu m (wavelength selective) photodiodes and passive spot size converters integrated with Y-shaped waveguide structures on InP, developed for further monolithic integration purposes. The characteristics of such IC subintegrations are similar to those of comparable, separately fabricated devices. Results on first somewhat more complex monolithic Y-junction 1.3 mu m/1.5 mu m transmitter/receiver ICs are presented.