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Hydrogen passivation in InP:Zn resulting from reactive ion etching during laser stripe formation

: Kreissl, J.; Moehrle, M.; Sigmund, A.; Bochnia, R.; Harde, P.; Ulrici, W.

DOI: 10.1109/ICIPRM.2000.850252

	IEEE Electron Devices Society: International Conference on Indium Phosphide and Related Materials 2000. Conference proceedings : 14 - 18 May 2000, Williamsburg Marriott, Williamsburg, Virginia, USA Piscataway, NJ: IEEE, 2000 ISBN: 0-7803-6320-5 ISBN: 0-7803-6321-3 ISBN: 0-7803-6322-1 pp.142-145
	International Conference on Indium Phosphide and Related Materials (IPRM) <12, 2000, Williamsburg/Va.>

	English
	Conference Paper
	Fraunhofer HHI ()
	hole density; hydrogen; iii-v semiconductors; indium compounds; passivation; semiconductor lasers; sputter etching; zinc; hydrogen passivation; indium phosphide; reactive ion etching; contact stripe formation; zinc acceptor; hole concentration; buried heterostructure laser; i-v characteristics; impurity complex; activation energy; inp:zn,h

Abstract
The passivation of zinc acceptors in an InP layer after reactive ion etching (RIE) using CH4/H2 has been investigated. Evidence is provided that the (P-H Zn) complex is responsible for the passivation. The recovery of the hole concentration needs a reactivation energy of 1.05 eV. In spite of the passivation of the exposed p-InP areas during buried heterostructure laser contact stripe formation by RIE, the U-I characteristics are unaffected because inside the contact stripe remains a sufficiently large non-passivated p-InP channel.