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2000
Conference Paper
Titel
Hydrogen passivation in InP:Zn resulting from reactive ion etching during laser stripe formation
Abstract
The passivation of zinc acceptors in an InP layer after reactive ion etching (RIE) using CH4/H2 has been investigated. Evidence is provided that the (P-H Zn) complex is responsible for the passivation. The recovery of the hole concentration needs a reactivation energy of 1.05 eV. In spite of the passivation of the exposed p-InP areas during buried heterostructure laser contact stripe formation by RIE, the U-I characteristics are unaffected because inside the contact stripe remains a sufficiently large non-passivated p-InP channel.
Tags
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hole density
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hydrogen
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iii-v semiconductors
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indium compounds
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passivation
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semiconductor lasers
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sputter etching
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zinc
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hydrogen passivation
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indium phosphide
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reactive ion etching
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contact stripe formation
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zinc acceptor
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hole concentration
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buried heterostructure laser
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i-v characteristics
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impurity complex
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activation energy