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2000
Conference Paper
Titel
High-power, picosecond pulse generation from surface implanted InGaAsP/InP ( lambda =1.53 mu m) laser diodes
Abstract
As already shown by previous studies, heavy ion implantation can produce a saturable absorber region and, when implemented into a laser resonator, enables the generation of short optical pulses in the picosecond regime. Recently, the feasibility of surface (masked) implantation was demonstrated on strained quantum well InGaAs/GaAs lasers. We present on-wafer fabrication of short pulse lasers on the InGaAsP/InP basis with saturable absorbers created with masked heavy ion implantation. We demonstrate that by using this cost-effective technique high-power (>1 W) picosecond pulse generation is achievable.
Tags
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gallium arsenide
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iii-v semiconductors
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indium compounds
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ion implantation
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optical fabrication
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optical pulse generation
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quantum well lasers
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high-power picosecond pulse generation
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surface implanted laser diodes
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masked heavy ion implantation
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on-wafer fabrication
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short pulse lasers
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saturable absorbers
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cost-effective technique
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high-yield
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1.53 micron
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20 ps
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InGaAsP-InP
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inp