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MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride

: Wolfram, P.; Ebert, W.; Kreissl, J.; Grote, N.


Journal of Crystal Growth 221 (2000), No.1-4, pp.177-182
ISSN: 0022-0248
International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) <10, 2000, Sapporo>
Conference Paper, Journal Article
Fraunhofer HHI ()
etching; gallium arsenide; iii-v semiconductors; indium compounds; optoelectronic devices; surface cleaning; vapour phase epitaxial growth; movpe-based in situ etching; tertiarybutylchloride precursor; InP layers; InGaAsp layers; movpe reactor; etching rate; morphology; h2 carrier gas; n2 carrier gas; underetching; mesa stripes; bh-type lasers; in situ substrate cleaning; semiconductors; InGaAs/inp; InGaAsp-InP

Tertiarybutylchloride (TBC) was used as a precursor for etching InP and InGaAsP layers in a MOVPE reactor. The effect of different process parameters on the etching rate and morphology was investigated. Similar results were obtained for the carrier gases hydrogen and nitrogen. TBC etching was successfully tested for underetching of mesa stripes, as required in BH-type lasers. Moreover, it proved to be an efficient method for in situ substrate cleaning.