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2001
Journal Article
Titel
1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
Abstract
Basic development steps towards the molecular beam epitaxy growth of AlGaAs/GaAs microcavity structures are presented, which contain self-organized InAs/GaInAs quantum dots as the active medium. The emission wavelength of these structures can be controllably adjusted within 1260-1340 nm by variation of the deposition parameters of the epitaxial layers without the use of any real-time monitoring technique. Based on quantum dot active material with optimized optical emission properties and accurately calibrated layer thicknesses microcavity light emitting diodes were fabricated. 40 mu m diameter devices, as characterized on-wafer, showed narrow electroluminescence spectra (FWHM: 13-26 nm) centered at 1310-1325 nm and narrow circular beam widths of FWHM<10 degrees were obtained on mounted devices.
Tags
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electroluminescence
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gallium arsenide
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iii-v semiconductors
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indium compounds
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light emitting diodes
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molecular beam epitaxial growth
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semiconductor epitaxial layers
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semiconductor growth
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semiconductor quantum dots
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GaAs-based microcavity led
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inas/GaInAs quantum dots
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molecular beam epitaxy growth
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selforganized quantum dots
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emission wavelength
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optical emission properties
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electroluminescence spectra
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mbe layers
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1260 to 1340 nm
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1310 to 1325 nm
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1300 nm
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GaAs
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inas-GaInAs