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  4. Detailed experimental study of high-frequency self-pulsation domains in multi-section DFB-lasers
 
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2000
Conference Paper
Title

Detailed experimental study of high-frequency self-pulsation domains in multi-section DFB-lasers

Abstract
We establish an extensive experimental registration technique to study the dependence of the pulsation in a three-section DFB-laser. The common feature of continuous pulsation domains is highlighted and the impact of geometrical parameters is investigated. The measurements allow the quantitative determination of pulsation frequency, rf-amplitude, wavelength and optical power at the same time. Based on a reproducible fabrication technology, we found that the phase section plays the main role to control the self-pulsations. The phase section also exhibits a negative reflectivity slope necessary for dispersive Q-switching like the reflector. Phase section lengths in the range between 200 and 500 mu m are very well suited. The length of the reflector section is not very critical Devices with 90 mu m and 200 mu m long reflectors work well. Other parameters that are responsible for the frequency of self-pulsations are determined by the heterostructure and must be optimized separately.
Author(s)
Hoffmann, D.
Brox, O.
Sahin, G.
Möhrle, M.
Sartorius, B.
Mainwork
Integrated Photonics Research 2000. Postconference edition  
Conference
Conference "Integrated Photonics Research" 2000  
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • distributed feedback lasers

  • q-switching

  • semiconductor lasers

  • waveguide lasers

  • high-frequency self-pulsation domains

  • multi-section dfb-lasers

  • pulsation

  • three-section dfb-laser

  • continuous pulsation domains

  • geometrical parameters

  • pulsation frequency

  • rf-amplitude

  • wavelength

  • optical power

  • fabrication

  • phase section

  • self-pulsations

  • negative reflectivity slope

  • dispersive q-switching

  • reflector

  • heterostructure

  • 200 to 500 micron

  • 90 to 200 micron

  • 1.55 micron

  • InGaAsP-InP

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