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2000
Conference Paper
Titel
Optimizing Fe-doped semi-insulating optical waveguide layers: Detection of interface layer conduction
Abstract
MOVPE-grown Fe-doped semi-insulating GaInAsP/InP optical waveguide layer stacks are characterized by admittance spectroscopy. A new analysis is presented, based on frequency-resolved circular current distribution calculation, which investigates residual buried interface sheet conductivity as well as bulk properties of the layer stack.
Language
English
Tags
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buried layers
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electrical conductivity
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gallium arsenide
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iii-v semiconductors
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indium compounds
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iron
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optical waveguides
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vapour phase epitaxial growth
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interface layer conduction
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movpe growth
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fe-doped semi-insulating GaInAsP/InP optical waveguide layer stack
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admittance spectroscopy
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frequency-resolved circular current distribution
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residual buried interface sheet conductivity
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bulk properties