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Highly selective etching of deep silica components using electron cyclotron resonance plasma

: Ferstl, M.


Microelectronic engineering 61-62 (2002), pp.881-886
ISSN: 0167-9317
Journal Article
Fraunhofer HHI ()
diffraction gratings; micro-optics; microlenses; optical arrays; optical fabrication; optical waveguides; silicon compounds; sputter etching; sio2 planar optical components; highly selective ecr plasma etching; electron cyclotron resonance plasma etcher; optimum etching conditions; etch rate; etch selectivity; low radiation damage; high plasma density; low pressure operation; plasma discharge control; ion energy control; arrayed-waveguide gratings; fresnel zone lenses; deep silica components; deep quartz glass; 2.45 GHz; sio2

Silicon dioxide etching technology for structuring planar optical components of some micrometers structure depth has been developed using an electron cyclotron resonance (ECR) plasma etcher. The optimum conditions for silicon dioxide etching are obtained in terms of etch rate, selectivity, and low radiation damage to the etched surface by fully utilizing such advantages of the ECR plasma etcher as high plasma density, low pressure operation, and independent control of ion energy and plasma discharge. A highly selective etching process has been developed enabling the structuring of high quality SiO2 components, such as arrayed-waveguide gratings and Fresnel zone lenses, at etching rates of some hundreds of nanometers per minute.