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1.3 mu m BH-FP laser with integrated monitor photodiode, 45 degrees reflector for bottom side emission employing full on-wafer fabrication

: Janiak, K.; Albrecht, P.; Fidorra, S.; Heidrich, H.; Rehbein, W.; Roehle, H.; Althaus, H.-L.


IEEE Electron Devices Society; IEEE Lasers and Electro-Optics Society:
IPRM, 14th Indium Phosphide and Related Materials Conference. Conference proceedings : May 12 - 16, 2002, Stockholm, Sweden
Piscataway: IEEE Operations Center, 2002
ISBN: 0-7803-7320-0
International Conference on Indium Phosphide and Related Materials (IPRM) <14, 2002, Stockholm>
Conference Paper
Fraunhofer HHI ()
antireflection coatings; fabry-perot resonators; laser cavity resonators; photodiodes; semiconductor device packaging; semiconductor lasers; surface mount technology; integrated monitor photodiode; bottom side emission; full on-wafer fabrication; laser facets; antireflective coatings; low-cost optoelectronic modules; smt-package technique; 1.3 micron

We report on a 1.3 mu m FP-BH laser with monolithically integrated monitor photodiode and 45 degrees reflector for bottom side emission of the laser light. The devices are fabricated by employing a full on-wafer process including the formation of laser facets and the deposition of the high/antireflective coatings. Besides the possibility of on-wafer characterization, this device with its bottom side optical emission opens the way for the fabrication of low-cost optoelectronic modules based on semiconductor SMT-package technique.