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MOVPE-based in-situ etching of InP epitaxial heterostructures

 
: Wolfram, P.; Franke, D.; Ebert, W.; Grote, N.

:

IEEE Electron Devices Society; IEEE Lasers and Electro-Optics Society:
IPRM, 14th Indium Phosphide and Related Materials Conference. Conference proceedings : May 12 - 16, 2002, Stockholm, Sweden
Piscataway: IEEE Operations Center, 2002
ISBN: 0-7803-7320-0
pp.331-334
International Conference on Indium Phosphide and Related Materials (IPRM) <14, 2002, Stockholm>
English
Conference Paper
Fraunhofer HHI ()
etching; iii-v semiconductors; indium compounds; mocvd; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor technology; surface cleaning; surface topography; vapour phase epitaxial growth; movpe-based in-situ etching; InP epitaxial heterostructures; tertiarybutylchloride precursor; process parameters; etch rate; surface morphology; crystallographic etching behaviour; substrate cleaning; bh laser structure growth; laser ridge formation; device fabrication; etching profiles; inp; InGaAsP; InGaAsP-InP

Abstract
We summarize our experimental results on MOVPE-based etching of InP and related (InGa)(AsP) materials using tertiarybutylchloride (TBCl) as precursor. The impact of various process parameters on etch rate and surface morphology is outlined, as well as the crystallographic etching behaviour. Two applications of TBCl etching are presented, namely substrate cleaning for eliminating detrimental substrate interface layers and the growth of BH laser structures involving in-situ etching for the formation of the laser ridge. Finally, epitaxy based in-situ etching is discussed from the device fabrication point of view.

: http://publica.fraunhofer.de/documents/N-12792.html