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All-active InGaAsP/InP ring cavities for widespread functionalities in the wavelength domain

 
: Troppenz, U.; Hamacher, M.; Rabus, D.G.; Heidrich, H.

:

IEEE Electron Devices Society; IEEE Lasers and Electro-Optics Society:
IPRM, 14th Indium Phosphide and Related Materials Conference. Conference proceedings : May 12 - 16, 2002, Stockholm, Sweden
Piscataway: IEEE Operations Center, 2002
ISBN: 0-7803-7320-0
pp.475-478
International Conference on Indium Phosphide and Related Materials (IPRM) <14, 2002, Stockholm>
English
Conference Paper
Fraunhofer HHI ()
gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; laser cavity resonators; optical communication equipment; optical delay lines; optical filters; optical resonators; ring lasers; semiconductor lasers; all-active ring resonator structures; filter operation; laser mode operation; driving conditions; add/drop filter devices; InGaAsP/InP ring cavities; all pass-filter elements; adjustable wavelength filters; microring resonator structures; single mode emission spectrum; 100 GHz; 50 GHz; 80 ps; 5 GHz; 6.5 mw; 250 micron; 50 micron

Abstract
All-active ring resonator structures allow filter operation as well as laser mode operation, only depending on the driving conditions. Add/drop filter devices based on active InGaAsP/InP have been realized for the 100 and 50 GHz free spectral range. The properties of all pass-filter elements built of active single ring resonators are investigated. A delay time up to 80 ps has been measured for a bending radius R of 250 mu m and a coupling ratio of 0.6 to the bus-waveguide. The respective dispersion of +or-280 ps/nm is attained within a pass band of 5 GHz. Operating in the laser mode, microring resonator structures with R = 50 mu m show a single mode emission spectrum with an optical power output as high as of 6.5 mW per facet.

: http://publica.fraunhofer.de/documents/N-12790.html