Options
2000
Conference Paper
Titel
GaN static induction transistor fabrication
Alternative
Fabrikation eines statischen Induktionstransistor
Abstract
We report on the design and development of a fully self-aligned manufacturing process for multifinger high-power GaN Static Induction Transistors, operating at X-band. A combined dry and wet etch process is used to fabricate the recessed gate structure. Hf-based ohmic contacts to (n)(+) GaN yield a specific contact resistance of less than (10)(-5) Ohm cm2 The leakage current of the Ni Schottky gates on the etched gate surface is measured to be less than 1 mA/mm.
Author(s)