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Planar GaAs MOSFET using wet thermally oxidised AlGaAs as gate insulator

Planarer GaAs MOSFET mit naßchemisch oxidiertem AlGaAs als Gate-Isolator

: Yu, E.; Shen, J.; Walther, M.; Lee, T.; Zhang, R.

DOI: 10.1049/el:20000281

	Electronics Letters 36 (2000), No.4, pp.359-361 ISSN: 0013-5194

	English
	Journal Article
	Fraunhofer IAF ()
	MOSFET; GaAs; AlGaAs; Gateoxid

Abstract
A planar GaAs MOSFET has been realised in which ion implantation is used for device isolation and wet thermal oxidation of Al(0.98)Ga(0.02)As for both the gate insulation and channel encapsulation. Selective etches of AlGaAs/GaAs and Al2O3/GaAs were incorporated in the device fabrication. The depletion-mode device has a threshold voltage of about -4V, a transconductance, of 23.9mS/mm and a low gate leakage current.

: http://publica.fraunhofer.de/documents/N-1254.html