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In situ reaction mechanism studies on ozone-based atomic layer deposition of Al2O3 and HfO2

: Rose, M.; Niinistö, J; Endler, I.; Bartha, J.W.; Kücher, P.; Ritala, M.


ACS applied materials & interfaces 2 (2010), No.2, pp.347-350
ISSN: 1944-8244
ISSN: 0013-936X
ISSN: 1944-8252
Journal Article
Fraunhofer IKTS ()
Fraunhofer CNT ()

The mechanisms OF technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al2O3 and HfO2 thin films are studied in situ by a quadrupole mass spectrometer coupled with a 300 mm ALD reactor. In addition to released CH4 and CO2, water was detected as one of the reaction byproduct in the TMA/O-3 process. In the TEMAH/O-3 process, the surface after the ozone pulse consisted of chemisorpted active oxygen and -OH groups, leading to the release of H2O, CO2, and HNEtMe during the metal precursor pulse.