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Next generation 1.5 mu m terahertz antennas

Mesa-structuring of InGaAs/InAlAs photoconductive layers
 
: Röhle, H.; Dietz, R.J.B.; Hensel, H.-J.; Böttcher, J.; Künzel, H.; Stanze, D.; Schell, M.; Sartorius, B.

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Postprint (984 KByte; PDF; )

Optics Express 18 (2010), No.3, pp.2296-2301
ISSN: 1094-4087
English
Journal Article, Electronic Publication
Fraunhofer HHI ()

Abstract
Mesa-structuring of InGaAs/InAlAs photoconductive layers is performed employing a chemical assisted ion beam etching (CAIBE) process. Terahertz photoconductive antennas for 1.5 mu m operation are fabricated and evaluated in a time domain spectrometer. Order-of-magnitude improvements versus planar antennas are demonstrated in terms of emitter power, dark current and receiver sensitivity.

: http://publica.fraunhofer.de/documents/N-125100.html