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Optical and mass spectrometric investigation of the interaction of hydrogen with nitrogen In (In)GaAsN layers

Optische und massenspektrometrische Untersuchungen der Wechselwirkung von Wasserstoff mit Stickstoff in (In)GaAsN-Schichten
 
: Alt, H.C.; Messerer, P.; Köhler, K.; Riechert, H.; Kirste, L.

:

Caldas, M. ; International Union of Pure and Applied Physics -IUPAP-:
Physics of Semiconductors. 29th International Conference on the Physics of Semiconductors, ICPS 2008 : Rio de Janeiro - Brazil, July 27-Aug 1, 2008
New York, N.Y.: AIP Press, 2009 (AIP Conference Proceedings 1199)
ISBN: 978-0-7354-0736-7
ISSN: 0094-243X
pp.87-88
International Conference on the Physics of Semiconductors (ICPS) <29, 2008, Rio de Janeiro>
English
Conference Paper
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductor; Heterostruktur; heterostructure; optische Eigenschaft; optical property

Abstract
Fourier transform infrared absorption spectroscopy and secondary ion mass spectroscopy have been carried out on GaAs based dilute nitride layers after treatment with H(+) or D(+) ions. Formation of N-H (D-H) centers is detected by vibrational absorption bands of H (D). The modes are assigned to two different complexes, each involving one H (D) atom. A major fraction of the hydrogen in the layers might be not or only loosely bound to nitrogen.

: http://publica.fraunhofer.de/documents/N-122035.html