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Improved Switching Characteristics of Fast Power MOSFETs Applying Solder Bump Technology

: Dieckerhoff, S.; Wernicke, T.; Kallmayer, C.; Guttowski, S.; Reichl, H.

Fulltext ()

International journal of power management electronics 2 (2009)
ISSN: 1687-6687
ISSN: 1687-6679
Journal Article, Electronic Publication
Fraunhofer IZM ()

The impact of a reduced package stray inductance on the switching performance of fast power MOSFETs is discussed applying advanced 3D packaging technologies. Starting from an overview over new packaging approaches, a solder bump technology using a flexible PI substrate is exemplarily chosen for the evaluation. Measurement techniques to determine the stray inductance are discussed and compared with a numerical solution based on the PEEC method. Experimental results show the improvement of the voltage utilization while there is only a slight impact on total switching losses.