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Effect of drain voltage on channel temperature and reliability of pseudomorphic InP-based HEMTs

Einfluß der Drainspannung auf Kanaltemperatur und Zuverlässigkeit von pseudomorphen HEMTs auf InP Substrat
: Dammann, M.; Chertouk, M.; Jantz, W.; Köhler, K.; Marsetz, W.; Schmidt, K.; Weimann, G.


Microelectronics reliability 40 (2000), pp.287-291
ISSN: 0026-2714
Journal Article
Fraunhofer IAF ()
InP-based HEMT; reliability; Zuverlässigkeit; drain voltage; Drainspannung; channel temperature; Kanaltemperatur; fluorine diffusion; Fluor Diffusion; activation energy; Aktivierungsenergie; field accelerated diffusion; feldbeschleunigte Diffusion; Arrhenius plot

By performing biased accelerated life tests and three dimensional temperature simulations the effect of drain voltage on reliability and channel temperature of pseudomorphic InAlAs/InGaAs HEMTs for low noise applications was investigated. At V d = 1 V excellent long term stability in nitrogen ambient was observed. Increasing the drain voltage to V d = 2 V at constant channel temperature leads to a faster degradation rate which is caused by field accelerated degradation mechanism, probably involving fluorine diffusion. The influence of gate width on channel temperature and reliability was found to be small.