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2000
Journal Article
Titel
Effect of drain voltage on channel temperature and reliability of pseudomorphic InP-based HEMTs
Alternative
Einfluß der Drainspannung auf Kanaltemperatur und Zuverlässigkeit von pseudomorphen HEMTs auf InP Substrat
Abstract
By performing biased accelerated life tests and three dimensional temperature simulations the effect of drain voltage on reliability and channel temperature of pseudomorphic InAlAs/InGaAs HEMTs for low noise applications was investigated. At V d = 1 V excellent long term stability in nitrogen ambient was observed. Increasing the drain voltage to V d = 2 V at constant channel temperature leads to a faster degradation rate which is caused by field accelerated degradation mechanism, probably involving fluorine diffusion. The influence of gate width on channel temperature and reliability was found to be small.
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