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Simulation of focused ion beam etching by coupling a topography simulator and a Monte-Carlo sputtering yield simulator

: Kunder, D.; Baer, E.; Sekowski, M.; Pichler, P.; Rommel, M.


Microelectronic engineering 87 (2010), No.5-8, pp.1597-1599
ISSN: 0167-9317
International Conference on Micro and Nano Engineering (MNE 2009) <35, 2009, Ghent>
Journal Article, Conference Paper
Fraunhofer IISB ()
sputter etching; simulation; Monte Carlo; FIB

For a realistic simulation of sputtering processes and the topography changes associated, we combined the 3-D topography simulator ANETCH with the Monte-Carlo ion implantation program MC SIM. The coupling between the programs provides the possibility to study the results of physical sputtering processes for nearly arbitrary ion/target combinations without a priori knowledge about the respective yield from experiments. As a first application, simulations were carried out to optimize process parameters of sputtering experiments. In a second application, the topography of a trench after FIB preparation is compared to simulations. The side-wall evolution at an edge due to ion irradiation is studied as a third application.