Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Process transfer of a-SixC1-x passivation layers from a laboratory - type to an industrial in-line PECVD reactor

 
: Suwito, D.; Janz, S.; Schetter, C.; Glunz, S.; Roth, K.

:
Postprint urn:nbn:de:0011-n-1187940 (247 KByte PDF)
MD5 Fingerprint: 567c6ff40e226955777409d0ead3a842
© 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Created on: 6.9.2012


IEEE Electron Devices Society:
33rd IEEE Photovolatic Specialists Conference, PVSC 2008. Proceedings. Vol.4 : San Diego, CA, May 11 - 16, 2008
Piscataway, NJ: IEEE, 2008
ISBN: 978-1-4244-1640-0
ISBN: 978-1-4244-1641-7
ISBN: 1-4244-1640-X
pp.1805-1808
Photovoltaic Specialists Conference (PVSC) <33, 2008, San Diego/Calif.>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
We report the successful transfer of passivating, intrinsic a-SixC1-x,:H layers from a laboratory batch-type to an industrial in-line plasma-enhanced chemical vapour deposition (PECVD) reactor. In both cases silane (SiH4) and methane (CH4) are used as precursor gases and the plasma energy is provided by a high frequency (13.65 MHz) as well as by a microwave (2.45 GHz) generator. Intensive process parameters such as temperature (350-400 degrees C) and pressure (0.3-0.4 mbar) could be directly transferred from the lab to the industrial system whereas power and gas composition had to be adjusted carefully to the different dimensions and geometry of the in-line reactor. By means of a statistical design of the experiments a parameter range for passivating a-Si(x)Ci(1-x) layers could be found resulting in surface recombination velocities as low as S < 10 cm/s. These values could be achieved without applying any wetchemical step to the silicon samples as the cleaning of the surface was performed in-situ in the plasma chamber. The deposition rate is 100 nm/min and therefore an order of magnitude higher than in our laboratory-type system. Fourier transform infrared spectroscopy (FT-IR) measurements performed on the in-line deposited aSi SixC1-x layers reveal an elevated carbon content compared to their counterparts originating from our static laboratory PECVD reactor.

: http://publica.fraunhofer.de/documents/N-118794.html