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2009
Conference Paper
Titel
Investigations on the plasma-surface interaction during DBD-treatment for low-temperature direct silicon wafer bonding
Abstract
O2 is an innovative activation method for low-temperature direct Si wafer bonding. Plasma-treated SiO2 layers are analyzed by spectroscopic methods (FTIR, XPS, ellipsometry), XRR, AFM and contact angle measurements. Reasons for improved low-temperature bond strengthening after DBD activation are discussed.