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Characterization of Ru and RuO2 thin films prepared by pulsed metal organic chemical vapor deposition

: Roeder, G.; Manke, C.; Baumann, P.K.; Petersen, S.; Yanev, V.; Gschwandtner, A.; Ruhl, G.; Petrik, P.; Schellenberger, M.; Pfitzner, L.; Ryssel, H.


Arwin, H.:
Papers presented at the 4th International Conference on Spectroscopic Ellipsometry, ICSE4 : Stockholm, Sweden, 11 - 15 June 2007
Weinheim: Wiley-VCH, 2008 (Physica status solidi. C, Current topics in solid state physics 5.2008, Nr.5)
pp.1231 - 1234
International Conference on Spectroscopic Ellipsometry (ICSE) <4, 2007, Stockholm>
Conference Paper, Journal Article
Fraunhofer IISB ()

Ultra-thin ruthenium (Ru) layers were fabricated by pulsed metal organic chemical vapor deposition in an Aixtron Tricent reactor using a metal-organic Ru precursor. Layer deposition was performed on different metal barrier combinations and on Al2O3 dielectric layers used in the fabrication of advanced Metal-Insulator-Metal (MIM) capacitor structures and on thermal SiO2 as reference structure. Ru layers with a thickness of 10 nm were characterized by Spectroscopic Ellipsometry (SE) and additional reference methods such as Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM), and X-Ray Reflectometry (XRR). As deposited and in situ annealed Ru layers were characterized by SE applying Drude-Lorentz- and Effective Medium Approximation (EMA) models. It was shown that the deposited layers consist of a Ru-RuO2 bilayer structure. By in situ annealing, the RuO2 layer thickness is reduced and highly pure Ru films are obtained. On the metal barriers the formation of a metal oxide interface, which is related to the deposition process, was determined.