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Simulation-based EUV source and mask optimization

: Fühner, T.; Erdmann, A.; Evanschitzky, P.


Kawahira, H.; Zurbrick, L.S. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Photomask technology 2008 : Papers from the SPIE Conference on Photomask Technology held as part of the 28th International Symposium on Photomask Technology. 7 - 10 October 2008, Monterey, California, USA
Bellingham, WA: SPIE, 2008 (SPIE Proceedings 7122)
ISBN: 978-0-8194-7355-4
Paper 71221Y
Conference on Photomask Technology <2008, Monterey/Calif.>
International Symposium on Photomask Technology <28, 2008, Monterey/Calif.>
Conference Paper
Fraunhofer IISB ()

Source and mask optimization has become a promising technique to push the limits of 193 nm immersion lithography. As the introduction of EUV lithography is at least delayed to the 22 nm technology node, sophisticated resolution enhancement techniques will already be required at a very early stage. Thus, pinpointing ideal mask layouts, mask materials, and illumination settings are as important aspects for EUV as for optical lithography. In this paper, we propose the application of global optimization techniques to identify appropriate process conditions for EUV lithography, using rigorous mask and imaging simulations.